Novel Radiation-Hardened High-Speed DFF Design Based on Redundant Filter and Typical Application Analysis

A cell-level radiation hardening by design (RHBD) method based on commercial processes of single event transient (SET) and upset (SEU) is proposed in this paper, which new radiation-hardened D-type flip-flops (DFFs) are designed. An application-specific integrated circuit (ASIC) a million gates level developed DFFs, SEU functional interruption (SEFI) heavy-ion tests carried out. The experimental results show that the DFF ability increased 63 times compared with DICE-designed DFF, three orders magnitude higher than redundantly designed DFF. SEFI ASIC 2.6 hardened TMR design.